AZ Central

EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...
Electronic Design

DC-Link Caps Promise 200,000-Hour Lifetime at 105°C

COC blend dielectric rated 25°C higher than standard film capacitors, enabling more compact DC-link designs for ...
IEEE

Intrinsic speed limit of negative capacitance transistors

Abstract: The emergence of negative capacitance as a way to limit power dissipation in CMOS logic transistors has raised the question of response delay of ferroelectric negative capacitance. Latency ...
IEEE

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Abstract: In this study, the negative DIBL (N-DIBL), negative differential resistance (NDR), and Miller effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) ...
C&EN

Wettability Control of Interfaces for High-Performance Organic Thin-Film Transistors by Soluble Insulating Polymer Films

Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key ...
GitHub

XXD HW30A 30A ESC Schematic

Make sure this is the correct schematic you are looking for by referring to the attached PCB images below. The schematic is only roughly verified. Please manually verify again. Feel free to open an ...